Masataka Sasada

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Speaker, Author, Co-Author

Mon. Mar 19, 2018 1:45 PM - 6:30 PM C302 (52-302)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[19p-C302-1~18] 13.7 Compound and power electron devices and process technology

2:30 PM - 2:45 PM

[19p-C302-4] Threshold voltage shift in vertical trench GaN-MOSFETs by negative gate-bias stress

〇(M1)Masataka Sasada¹, Norihumi Takashima¹, Shoichi Murata¹, Joel Asubar¹, Hirokuni Tokuda¹, Katsunori Ueno², Masaharu Edo², Masaaki Kuzuhara¹ (1.Fukui Univ., 2.Fuji Electric Co., Ltd.)

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