Ryo Tanaka

→ Search for Ryo Tanaka in Google Scholar

Speaker, Author, Co-Author

Mon. Mar 19, 2018 1:45 PM - 6:30 PM C302 (52-302)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[19p-C302-1~18] 13.7 Compound and power electron devices and process technology

2:45 PM - 3:00 PM

[19p-C302-5] Demonstration of vertical GaN MOSFET fabricated by Mg ion implantation

〇Ryo Tanaka¹, Shinya Tanashima¹, Katsunori Ueno¹, Hideaki Matsuyama¹, Masaharu Edo¹, Kiyokazu Nakagawa² (1.Fuji Electric, 2.Univ. of Yamanashi)