[19p-C302-1~18] 13.7 Compound and power electron devices and process technology

[19p-C302-5] Demonstration of vertical GaN MOSFET fabricated by Mg ion implantation

〇Ryo Tanaka¹, Shinya Tanashima¹, Katsunori Ueno¹, Hideaki Matsuyama¹, Masaharu Edo¹, Kiyokazu Nakagawa² (1.Fuji Electric, 2.Univ. of Yamanashi)

Keywords:Gallium Nitride, Ion implantation, MOSFET

We report the characteristics of the vertical GaN MOSFET fabricated on the partially Mg implanted n-GaN epitaxial layers. As for the Mg implantation, a BOX profile with a concentration of 1E18 cm^-3 and a depth of 500 nm was used. Normally-off MOSFET operation with Vth ~ 9V has been observed with SiO₂ gate insulator. The on-resistance was proportional to the channel length, so it has been confirmed that the device characteristics can be controlled by design dimensions.