3:00 PM - 3:15 PM
△ [19p-C302-6] Fabrication of recessed-gate AlGaN/GaN MOS-HFET with AlON gate insulator
Keywords:GaN, AlGaN, HFET
Presentation information
Oral presentation
13 Semiconductors » 13.7 Compound and power electron devices and process technology
[19p-C302-1~18] 13.7 Compound and power electron devices and process technology
Mon. Mar 19, 2018 1:45 PM - 6:30 PM C302 (52-302)
Kozo Makiyama(Fujitsu Lab.), Masashi Kato(NITech)