Daiki Tanaka

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Speaker, Author, Co-Author

Mon. Mar 19, 2018 1:30 PM - 6:00 PM D103 (56-103)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[19p-D103-1~17] 15.6 Group IV Compound Semiconductors (SiC)

3:00 PM - 3:15 PM

△ [19p-D103-7] Study on high boron and nitrogen co-doping in 6H-SiC single layer by closed sublimation growth

〇(B)Daiki Tanaka¹, Hiroaki Kurokawa¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Akasaki Research center , Nagoya Univ.)

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