Ryota Sakuta

→ Search for Ryota Sakuta in Google Scholar

Speaker, Author, Co-Author

Tue. Mar 20, 2018 1:15 PM - 5:00 PM D103 (56-103)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[20p-D103-1~14] 15.6 Group IV Compound Semiconductors (SiC)

1:15 PM - 1:30 PM

△ [20p-D103-1] Relationship between interface defect density and grown wet-oxide thickness in 4H-SiC MOS structure fabricated with low-temperature wet-oxidation after interface nitridation

〇Ryota Sakuta¹, Mizuki Nishida¹, Hihohisa Hirai¹, Koji Kita¹ (1.Tokyo Univ.)