Masayuki Tsukui

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Speaker, Author, Co-Author

Tue. Mar 20, 2018 1:30 PM - 3:30 PM P6 (P)

Poster presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[20p-P6-1~29] 15.4 III-V-group nitride crystals

1:30 PM - 3:30 PM

[20p-P6-14] InAlN/AlN/GaN HEMT Grown on 200 mm Si Substrate by Fast Rotating Single-Wafer MOCVD Tool

〇Masayuki Tsukui¹, Hajime Nago¹, Kiyotaka Miyano¹, Yasushi Iyechika¹, Hideshi Takahashi¹ (1.NuFlare Technology)