Session information

Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[18a-D103-1~10] 15.7 Crystal characterization, impurities and crystal defects

Sun. Mar 18, 2018 9:00 AM - 11:45 AM D103 (56-103)

Toshiaki Ono(SUMCO), Hiroki Kawai(Toshiba)

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9:00 AM - 9:15 AM

▲ [18a-D103-1] Numerical simulation of crystal rotation effect on the solid-liquid interface in the floating-zone (FZ) silicon

〇(P)Xuefeng Han¹, Satoshi Nakano¹, Xin Liu¹, Hirofumi Harada¹, Yoshiji Miyamura¹, Koichi Kakimoto¹ (1.RIAM, Kyushu Univ.)

9:15 AM - 9:30 AM

▲ [18a-D103-2] Numerical analyses on carbon transport and control during the melting process of Czochralski silicon crystal growth

〇Xin Liu¹, Xue-Feng Han¹, Satoshi Nakano¹, Hirofumi Harada¹, Yoshiji Miyamura¹, Koichi Kakimoto¹ (1.Kyushu Univ.)

9:30 AM - 9:45 AM

[18a-D103-3] CO concentration in CZ furnace (II)

〇Yoshiji Miyamura¹, Hirofumi Harada¹, Satoshi Nakano¹, Koichi Kakimoto¹ (1.Kyushu Univ.)

9:45 AM - 10:00 AM

[18a-D103-4] Impact of CO Generation during Melting Process on Carbon Concentration in Czochralski Silicon

〇Yuta Nagai¹, Hiroyuki Tsubota¹, Hisashi Matsumura¹ (1.GlobalWafers Japan)

10:00 AM - 10:15 AM

[18a-D103-5] Interstitial generation mechanism during CZ silicon growth using cooling type hot zone (Ⅰ)

〇Takao Abe¹, Toru Takahashi¹, Koun Shirai² (1.ShinEtsu Handotai, 2.ISIR, Osaka Univ.)

10:15 AM - 10:30 AM

[18a-D103-6] Interstitial generation mechanism during CZ silicon crystal growth using mild cooling type hot zone (Ⅱ)

〇Takao Abe¹, Toru Takahashi¹, Koun Shirai² (1.ShinEtsu Handotai, 2.ISIR, Osaka Univ.)

10:45 AM - 11:00 AM

[18a-D103-7] Comments on the Voronkov model (4) Evaluation of free energy

〇Masashi Suezawa¹, Yosiaki Iijima¹, Ichiro Yonenaga¹ (1.I.M.R.,Tohoku Univ.)

11:00 AM - 11:15 AM

[18a-D103-8] Concentrations of thermal equilibrium point defects in silicon crystals

〇Masashi Suezawa¹, Yosiaki Iijima¹, Ichiro Yonenaga¹ (1.I.M.R.,Tohoku Univ.)

11:15 AM - 11:30 AM

[18a-D103-9] Formation mechanism of Cu₄ complex in silicon

〇Koun Shirai¹, Takayoshi Fujimura¹ (1.ISIR, Osaka Univ.)

11:30 AM - 11:45 AM

[18a-D103-10] Structure Database Analysis for Irradiation Induced Defect in Silicon Crystal using Ab Initio Random Structure Searching

〇JUN INAGAKI¹, Georg Schusteritsch², Chris J. Pickard², Ming-Hsien Lee¹ (1.TamKang Univ., 2.Cambridge Univ.)

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