The 65h JSAP Spring Meeting, 2018

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13 Semiconductors » 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[17a-C101-1~11] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

Sat. Mar 17, 2018 9:30 AM - 12:30 PM C101 (52-101)

Takashi Noguchi(Univ. of the Ryukyus)

10:00 AM - 10:15 AM

[17a-C101-3] Fabrication of high mobility n-type Ge film by Atmospheric Pressure Micro-Thermal-Plasma-Jet

〇Hiromu Harada1, Hiroaki Hanafusa1, Seiichiro Higashi1 (1.Graduate School of Advanced Sciences of Matter, Hiroshima University)

Keywords:germanium

本研究ではn型Ge-TFTの作製に向け、a-Geにn型不純物であるリン(P)をドープし、µ-TPJを照射することで高移動度n型Ge膜の作製を試みた。