[17a-F206-1~13] 13.3 Insulator technology

△ [17a-F206-1] Evaluation of trapped charges during high-field stress application to SiO₂

〇(M1)Takeshi Nanke¹, Ryu Hasunuma¹ (1.Univ. of Tsukuba)

Keywords:semiconductor, oxide, trap

We invented an evaluation method for separating component of trapped charges in SiO₂ during current stress application. This is a method by measuring with constant current of low-field after applying high-field stress to SIO₂. Experimental results show that trapped holes recombine with injected electrons and neutralization of charges is occurring.