[17p-C101-1~6] 13.4 Si系プロセス・Si系薄膜・配線・MEMS・集積化技術

[17p-C101-2] Capping Effect of Crystallized InSb film on Glass

〇(D)Charith Jayanada Koswaththage¹、Tatsuyuki Higashizako¹、Tatsuya Okada¹、Takashi Noguchi¹、Hirosato Tanaka²、Mamoru Furuta² (1.Univ. of the Ryukyus、2.Kochi Uni. of Tech.)

キーワード：InSb, Hall Device, BLDA