Oral presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[17p-C101-1~6] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

Sat. Mar 17, 2018 4:00 PM - 5:30 PM C101 (52-101)

Seiichiro Higashi(Hiroshima Univ.)

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4:00 PM - 4:15 PM

△ [17p-C101-1] Effect of SiO_x capping film on crystallization of Ge film by flash lamp annealing

〇(B)Yoshiki Akita¹, Akira Heya¹, Naoto Matsuo¹, Kazuyuki Kohama², Kazuhiro Ito² (1.univ.of Hyogo, 2.univ. of Osaka)

4:15 PM - 4:30 PM

[17p-C101-2] Capping Effect of Crystallized InSb film on Glass

〇(D)Charith Jayanada Koswaththage¹, Tatsuyuki Higashizako¹, Tatsuya Okada¹, Takashi Noguchi¹, Hirosato Tanaka², Mamoru Furuta² (1.Univ. of the Ryukyus, 2.Kochi Uni. of Tech.)

4:30 PM - 4:45 PM

[17p-C101-3] Explosive crystallization of amorphous Ge induced by electron irradiation

〇(DC)Masayuki Okugawa¹, Ryusuke Nakamura¹, Hiroshi Numakura¹, Manabu Ishimaru², Hidehiro Yasuda³ (1.Osaka Pref. Univ., 2.Kyushu Inst. Univ., 3.Osaka Univ.)

4:45 PM - 5:00 PM

[17p-C101-4] Effects of hydrogen on crystallization of amorphous Ge

〇(M1)Yuki Hanya¹, Masayuki Okugawa¹, Ryusuke Nakamura¹, Hiroshi Numakura¹, Goro Oohata¹, Kohji Mizoguchi¹, Manabu Ishimaru², Hidehiro Yasuda³ (1.Osaka Pref. Univ., 2.Kyushu Inst. Univ., 3.Osaka Univ.)

5:00 PM - 5:15 PM

[17p-C101-5] Low Temperature Crystallization using BLDA for PECVD Si films without de-hydrogenation

〇Takashi Noguchi¹, Yuya Ishiki¹, Futa Gakiya¹, Tatsuya Okada¹, Taro Morimura², Atsushi Ota², Yasushi Nishikata² (1.Univ.f the Ryukyus, 2.ULVAC Inc.)

5:15 PM - 5:30 PM

[17p-C101-6] Crystallinity Improvement in B-Doped Si and Its Influence upon Si-Ge p⁺-n Junctions Formed by ECR Ar Plasma CVD

〇(DC)Wu Li¹, Naofumi Ueno¹, Nagafumi Kato¹, Masao Sakuraba¹, Hisanao Akima¹, Shigeo Sato¹ (1.Tohoku Univ.)

Session information

[17p-C101-1~6] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

△ [17p-C101-1] Effect of SiO_x capping film on crystallization of Ge film by flash lamp annealing

[17p-C101-2] Capping Effect of Crystallized InSb film on Glass

[17p-C101-3] Explosive crystallization of amorphous Ge induced by electron irradiation

[17p-C101-4] Effects of hydrogen on crystallization of amorphous Ge

[17p-C101-5] Low Temperature Crystallization using BLDA for PECVD Si films without de-hydrogenation

[17p-C101-6] Crystallinity Improvement in B-Doped Si and Its Influence upon Si-Ge p⁺-n Junctions Formed by ECR Ar Plasma CVD

Authentication

Session information

[17p-C101-1~6] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

△ [17p-C101-1] Effect of SiOx capping film on crystallization of Ge film by flash lamp annealing

[17p-C101-2] Capping Effect of Crystallized InSb film on Glass

[17p-C101-3] Explosive crystallization of amorphous Ge induced by electron irradiation

[17p-C101-4] Effects of hydrogen on crystallization of amorphous Ge

[17p-C101-5] Low Temperature Crystallization using BLDA for PECVD Si films without de-hydrogenation

[17p-C101-6] Crystallinity Improvement in B-Doped Si and Its Influence upon Si-Ge p+-n Junctions Formed by ECR Ar Plasma CVD

Authentication

△ [17p-C101-1] Effect of SiO_x capping film on crystallization of Ge film by flash lamp annealing

[17p-C101-6] Crystallinity Improvement in B-Doped Si and Its Influence upon Si-Ge p⁺-n Junctions Formed by ECR Ar Plasma CVD