The 65h JSAP Spring Meeting, 2018

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6 Thin Films and Surfaces » 6.4 Thin films and New materials

[17p-C103-1~13] 6.4 Thin films and New materials

Sat. Mar 17, 2018 1:45 PM - 6:00 PM C103 (52-103)

Yoshinobu Nakamura(Univ. of Tokyo), Motofumi Suzuki(Kyoto Univ)

5:30 PM - 5:45 PM

△ [17p-C103-12] Growth condition optimization of MnS buffer layer deposited by RF-sputtering for non-polar AlN film growth

〇(M1)Kouta Tatejima1,2, Takahiro Nagata2, Kejiji Ishibashi3, Kenichirou Takahashi3, Setsu Suzuki3, Atsushi Ogura1, Toyohiro Chikyow2 (1.Meiji Univ., 2.NIMS, 3.COMET.Inc)

Keywords:MnS buffer layer, AlN, GaN, Sputtering