[17p-E201-1~7] Progress of compound semiconductor device technologies: what can learn from history of GaAs device development

[17p-E201-3] Review of crystal characterization and contact formation for GaN-related materials

〇Kenji Shiojima¹ (1.Univ. of Fukui)

Keywords:GaN, contact, crystal characterization

We review crystal characterization and contact formation on GaN-related materials from the early days, comparing with the results on GaAs and other mid-bandgap materials.