[17p-E201-1~7] Progress of compound semiconductor device technologies: what can learn from history of GaAs device development

[17p-E201-2] High Purity MBE-Grown AlGaAs/InGaAs Connecting to Development and Production of Epitaxial Wafers for Electron Devices

〇Tomoyoshi Mishima¹ (1.Hosei Univ.)

Keywords:compound semiconductors, MBE, MOVPE

Crystalline quality improvements of AlGaAs/GaAs epitaxial layers at an early stage of MBE technology at Hitachi will be reviewed. By developments of very high purity materials which were suited in use at ultra-high vacuum conditions, the epitaxial layers were much progressed in quality and used in developments for electron devices. These understandings were transferred to Hitachi Cable's (now SCIOCS’s) MOVPE technologies for mass-producing high quality epitaxial layers.