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Symposium » Progress of compound semiconductor device technologies: what can learn from history of GaAs device development

Symposium (Oral)

[17p-E201-1~7] Progress of compound semiconductor device technologies: what can learn from history of GaAs device development

Sat. Mar 17, 2018 1:15 PM - 4:20 PM E201 (57-201)

Masashi Kato(NITech), Taketomo Sato(Hokkaido Univ.)

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1:15 PM - 1:20 PM

[17p-E201-1] Opening Remarks

〇Kenji Shiojima¹ (1.Univ. of Fukui)

1:20 PM - 1:50 PM

[17p-E201-2] High Purity MBE-Grown AlGaAs/InGaAs Connecting to Development and Production of Epitaxial Wafers for Electron Devices

〇Tomoyoshi Mishima¹ (1.Hosei Univ.)

1:50 PM - 2:20 PM

[17p-E201-3] Review of crystal characterization and contact formation for GaN-related materials

〇Kenji Shiojima¹ (1.Univ. of Fukui)

2:20 PM - 2:50 PM

[17p-E201-4] Current Status and Future of HEMTs for High-speed Applications

〇Tsuyoshi Takahashi^1,2, Kozo Makiyama^1,2 (1.Fujitsu Labs., 2.Fujitsu)

2:50 PM - 3:20 PM

[17p-E201-5] 25 years history of InP-based HBT R&D

〇Minoru Ida¹, Yuta Shiratori¹ (1.NTT Device Technology Labs)

3:20 PM - 3:50 PM

[17p-E201-6] Development of GaN MOCVD Epitaxial Wafers for RF Applications

〇Takeshi Tanaka¹ (1.SCIOCS Co. Ltd.)

3:50 PM - 4:20 PM

[17p-E201-7] Current status and perspectives of SiC power devices development

〇Yoshiyuki Yonezawa¹ (1.AIST)

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