[17p-E202-1~19] 15.4 III-V-group nitride crystals

△ [17p-E202-8] Effect of content and thickness of AlGaN interlayer on strain of GaN on Si substrate

〇Takuya Nakahara¹, Momoko Deura¹, Takeshi Momose¹, Yoshiaki Nakano¹, Masakazu Sugiyama², Yukihiro Shimogaki¹ (1.Univ. of Tokyo, 2.RCAST, Univ. of Tokyo)

Keywords:GaN on Si, AlGaN interlayer

AlGaN interlayer has been focused to compensate the tensile strain of GaN grown on Si wafer generating during cooling down. We investigated the dependence of Al content and thickness of AlGaN interlayer on compressive stress of GaN layer on the basis of experiment and simulation. When the Al content exceeds the optimum value, strain of GaN layer drastically relaxes to the constant value at the initial stage and continues to decrease gradually. Thickness has also the optimum value, which is smaller as the Al content is larger.