Evaluation of border-traps in GeO<sub>2</sub>/Ge gate stacks grown by thermal oxidation and plasma oxidation

Presentation information

Oral presentation

13 Semiconductors » 13.3 Insulator technology

Sat. Mar 17, 2018 1:45 PM - 6:15 PM F206 (61-206)

Tomo Ueno(TUAT), Akio Ohta(Nagoya Univ.)

2:30 PM - 2:45 PM

〇(D)Weichen Wen¹, Taisei Sakaguchi¹, keisuke Yamamoto¹, Dong Wang¹, Hiroshi Nakashima² (1.IGSES, Kyushu Univ., 2.GIC, Kyushu Univ.)

Keywords:Ge MOS