The 65h JSAP Spring Meeting, 2018

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13 Semiconductors » 13.3 Insulator technology

[17p-F206-1~17] 13.3 Insulator technology

Sat. Mar 17, 2018 1:45 PM - 6:15 PM F206 (61-206)

Tomo Ueno(TUAT), Akio Ohta(Nagoya Univ.)

3:15 PM - 3:30 PM

[17p-F206-7] Characteristic change of GeO 2 / Ge interface by Hf-Post Metallization Annealing

〇Haruka Fujiwara1, Yoshitaka Iwazaki1, Tomo Ueno1, Hiroshi Yamada1, Mitaro Namiki1 (1.Tokyo Univ. of Agri. & Tech)

Keywords:semiconductor, Ge