[17p-P10-1~93] 10 Spintronics and Magnetics（Poster）

[17p-P10-13] Annealing effect on magnetic anisotropy and its voltage modulation of FeIr/MgO

〇Shota Hasebe¹, Kohei Nawaoka¹, Joko Suwardy¹, Minori Goto^1,2, Yoshishige Suzuki^1,2, Shinji Miwa^1,2 (1.Osaka Univ., 2.CSRN)

Keywords:Spintronics, Voltage controlled magnetic anisotropy, spin-orbit interaction

To establishing an efficient electrical control of magnetization for magnetic memory devices, it is important to obtain both a perpendicular magnetic anisotropy (PMA) and voltage-controlled magnetic anisotropy (VCMA). It has recently been reported that employing Ir, which has a large spin-orbit interaction, in Fe/MgO system enhances the PMA and VCMA [1]. In this study, we evaluated the PMA and the VCMA of Fe/Ir/MgO multilayers after annealing at various temperatures to reveal the influence of Ir insertion on the magnetic properties.