[17p-P12-1~27] 13.7 Compound and power electron devices and process technology

[17p-P12-19] Characterization of traps in He-implanted n-GaN

〇Ken Iyoda¹, Yutaka Tokuda¹, Kenji Shiojima², Joji Ito³, Takahide Yagi³ (1.Aichi Inst. of Tech, 2.Fukui Univ., 3.SHI-ATEX Co, Ltd.)

Keywords:semiconductor, ion-implanted n-GaN, Deep Level Transient Spectroscopy / Minority Carrier Transient Spectroscopy

We have characterized traps introduced in MOCVD n-GaN by He ion implantation with DLTS and MCTS. Comparison was made between He and H iom implantation. DLTS signals increase due to the generation of defects by ion implantation. A broad peak labeled E0 is observed in addition to the gradual increase of DLTS signals above 200 K, which is relatively important in He ion implantation. This suggests the higher production of deeper levels by He ion implantation. A comparative study of annealing behavior of defects will be between He and H ion implantation.