[17p-P12-1~27] 13.7 Compound and power electron devices and process technology

[17p-P12-27] Influence of gallium oxide interfacial layer on electrical characteristics of Al₂O₃/n-GaN capacitors

〇(M1)Kazuya Yuge^1,2, Toshihide Nabatame², Yoshihiro Irokawa², Akihiko Ohi², Naoki Ikeda², Liwen Sang², Toyohiro Chikyow², Yasuo Koide², Tomoji Ohishi¹ (1.SIT, 2.NIMS)

Keywords:GaN, Al2O3, Gallium oxide interfacial layer