[17p-P12-1~27] 13.7 Compound and power electron devices and process technology

[17p-P12-9] Remote Oxygen/Helium Plasma Enhanced CVD of SiO₂ on GaN(0001) –
Difference from Remote Oxygen/Argon Plasma Enhanced CVD

〇TRUYEN XUAN NGUYEN^1,2, Noriyuki Taoka², Akio Ohta¹, Hisashi Yamada², Tokio Takahashi², Mitsuhisa Ikeda¹, Katsunori Makihara¹, Mitsuaki Shimizu², Seiichi Miyazaki¹ (1.Nagoya Univ., 2.AIST GaN-OIL)

Keywords:SiO2/GaN interface, remote plasma CVD, interface

So far, we have clarified that SiO₂/GaN structure formed by remote oxygen plasma enhanced CVD (ROPE-CVD) shows a high thermal stability that interface state density D_it is as low as 1×10 ¹¹cm^-2eV^-1 even though post deposition annealing at 800 ºC. In contrast, the condition of plasma such the kind of dilution gas or excitation power is expected to affects the interface characteristics of the SiO₂/GaN structure. Therefore, we have clarified the influences of Ar or He dilution on the interface characteristics of ROPE-CVD SiO₂/GaN in this work.