[17p-P7-1~21] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[17p-P7-1] Evaluation of the process characteristics of aluminum-assisted chemical vapor etching

〇Reo Kometani^1,2, Masato Okuno², Shin-ichi Warisawa^1,2 (1.Grad. Sch. of Front. Sci., Univ. of Tokyo, 2.Grad. Sch. of Eng., Univ. of Tokyo)

Keywords:Al-assisted chemical vapor etching, Silicon dioxide, High speed anisotropic chemical etching

Process characteristics of chemical vapor etching using Al for SiO₂ were evaluated in this study. Al-assisted chemical vapor etching enables the high speed anisotropic etching of SiO₂. Etching rate was 16.9 times faster than the etching rate of hydrofluoric acid chemical vapor etching without Al. And, its etching rate was depended on the oxygen content in Al. Etching properties of Al-assisted chemical vapor etching will be reported in detail.