The 65h JSAP Spring Meeting, 2018

Presentation information

Poster presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[17p-P7-1~21] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

Sat. Mar 17, 2018 1:30 PM - 3:30 PM P7 (P)

1:30 PM - 3:30 PM

[17p-P7-13] Silicon-based Nano-hole IR Detector with Supercritical Fluid Deposition of Copper

〇(M1)Shun Yasunaga1, Hidetoshi Takahashi1, Tetsuo Kan2, Takuya Tsukagoshi1, Takeshi Momose1, Tomoyuki Takahata1, Isao Shimoyama1 (1.The Univ. of Tokyo, 2.The Univ. of Electro-Communications)

Keywords:MEMS, Infrared, Schottky junction

We fabricated a silicon-based infrared detector with holes, that are several-hundred-nanometers in scale and are covered with copper layer made with supercritical fluid deposition. The device indicated improvement in responsivity.