[17p-P8-1~24] 13.5 Semiconductor devices and related technologies

[17p-P8-4] Fabrication technologies of Si/SiGe hole-tunneling RTD formed by sputter epitaxy and its characteristic control

〇Minoru Wakiya¹, Takahiro Tsukamoto¹, Yoshiyuki Suda¹ (1.Tokyo Univ. of Agric. & Technol.)

Keywords:resonant tunneling diode