The 65h JSAP Spring Meeting, 2018

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13 Semiconductors » 13.5 Semiconductor devices and related technologies

[17p-P8-1~24] 13.5 Semiconductor devices and related technologies

Sat. Mar 17, 2018 1:30 PM - 3:30 PM P8 (P)

1:30 PM - 3:30 PM

[17p-P8-7] Effects of W/ZrO2/Al2O3 gate stack on the performance of InGaAs TFET with Zn-diffused source

〇(D)DAEHWAN AHN1, SANGHEE YOON1, MITSURU TAKENAKA1, SHINICHI TAKAGI1 (1.The Univ. of Tokyo)

Keywords:Tunnel Field Effect Transistor, InGaAs, ZrO2