[18a-C302-1~12] 13.7 Compound and power electron devices and process technology

[18a-C302-8] Improvement of Contact Characteristics by Nitrogen Radical Treatment on ITO/p-GaN Interface

〇Takuji Yamamoto¹, Masanori Shirai¹, Satoru Takasawa¹, Satoru Ishibashi¹ (1.ULVAC, Inc.)

Keywords:GaN, Contact Characteristics, Nitrogen Radical