The 65h JSAP Spring Meeting, 2018

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13 Semiconductors » 13.7 Compound and power electron devices and process technology

[18a-C302-1~12] 13.7 Compound and power electron devices and process technology

Sun. Mar 18, 2018 9:00 AM - 12:15 PM C302 (52-302)

Kenji Shiojima(Univ. of Fukui)

11:15 AM - 11:30 AM

[18a-C302-9] Dependence of etching selectivity on Al composition of GaN / AlGaN Heterostructure

〇Jumpei Sumino1 (1.Nagoya Inst of Tech.)

Keywords:Nitride semiconductor, Selective dry etching