[18a-D103-1~10] 15.7 Crystal characterization, impurities and crystal defects

[18a-D103-8] Concentrations of thermal equilibrium point defects in silicon crystals

〇Masashi Suezawa¹, Yosiaki Iijima¹, Ichiro Yonenaga¹ (1.I.M.R.,Tohoku Univ.)

Keywords:silicon crystal, vacancy, interstitial

Concentrations of thermal equilibrium point defects are important to understand the self-diffusion, the grown-in point defects and so on. In case of Si crystals, they have not yet determined. We determine them of vacancies and interstitials from the analysis of self-diffusion coefficients which were reported at the meeting of last year. The vacancy concentration is smaller than that of interstitial at melting point, which is opposite to Voronkov model on the grown-in point defects in silicon crystals.