[18a-D103-1~10] 15.7 Crystal characterization, impurities and crystal defects

[18a-D103-7] Comments on the Voronkov model (4) Evaluation of free energy

〇Masashi Suezawa¹, Yosiaki Iijima¹, Ichiro Yonenaga¹ (1.I.M.R.,Tohoku Univ.)

Keywords:Voronkov model, pair annihilation, point defect

Voronkov explained the residual point defects in Si crystals with the pair annhilation of supersaturated vacancies and interstitials. Nakamura performed numerical analysis of the Voronkov model and obtained the densities of residual defects. We evaluated the free energy due to residual point defects given by Nakamura and found that the free enegy did not decrease due to pair annihilation.That suggests that their pair annihilation scheme is not correct.