The 65h JSAP Spring Meeting, 2018

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15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[18a-D103-1~10] 15.7 Crystal characterization, impurities and crystal defects

Sun. Mar 18, 2018 9:00 AM - 11:45 AM D103 (56-103)

Toshiaki Ono(SUMCO), Hiroki Kawai(Toshiba)

10:15 AM - 10:30 AM

[18a-D103-6] Interstitial generation mechanism during CZ silicon crystal growth using mild cooling type hot zone (Ⅱ)

〇Takao Abe1, Toru Takahashi1, Koun Shirai2 (1.ShinEtsu Handotai, 2.ISIR, Osaka Univ.)

Keywords:point defects in Si