[18a-E201-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18a-E201-10] High mobility and highly reliable thin-film transistor with InGaZnOx-hetero-channel

〇(M1)Ryunosuke Higashi¹, Hirosato Tanaka¹, Seiichiro Takahashi³, Isamu Yashima³, Mamoru Furuta^1,2 (1.Kochi Univ. of Technology, 2.Center for Nanotechnology, Research Institute, Kochi Univ. of Technology, 3.Mitsui Mining & Smelting Co.,LTD)

Keywords:High mobility, IGZO, TFT

We have fabricated In-rich InGaZnO thin film transistor (TFT) by increasing the oxygen flow rate ratio during deposition channel and film thickness reduction (10 nm).
We achieved good TFT properties, such as field mobility of 30 cm²/Vs, subthreshold voltage of -1.0V. Although the TFT shows a degradation behavior under positive bias temperature stress testing in ambient air. In this study, We tried to fabricate the heterojunction channel in which IGZO with different In ratio was laminated for improve reliability.