[18a-E201-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18a-E201-11] Bulk single crystal growth of a transparent conducting oxide InGaZnO4 using a floating-zone method under high air pressure

〇Yusuke Tanaka¹, Fuji Takenori², Wada Kazuhiro¹, Shimizu Manato¹, Hirochi Yusuke¹, Kase Naoki¹, Tamura Ryuji³, Saleem Denholme¹, Kimizuka Noboru⁴, Miyakawa Nobuaki¹ (1.Tokyo Univ. Sci., 2.Univ. Tokyo, 3.Tokyo Univ. Sci., 4.Sonora Univ.)

Keywords:IGZO, Large bulk single crystal growth, transparent conducting oxides

Transparent conducting oxides have been attracting attention for the next-generation transparent electrodes and (InGaO₃)_m(ZnO)_n thin films have been actively studied. On the other hand, it has not been reported that a bulk single crystal is larger than ~μm size. However, large bulk single crystals of InGaZnO₄ have been successfully grown using a floating zone method under high air pressure. we will report about its electrical- and optical- properties too.