Yusuke Tanaka

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Speaker, Author, Co-Author

Sun. Mar 18, 2018 9:00 AM - 12:15 PM E201 (57-201)

Oral presentation
| 21 Joint Session K
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18a-E201-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

12:00 PM - 12:15 PM

[18a-E201-11] Bulk single crystal growth of a transparent conducting oxide InGaZnO4 using a floating-zone method under high air pressure

〇Yusuke Tanaka¹, Fuji Takenori², Wada Kazuhiro¹, Shimizu Manato¹, Hirochi Yusuke¹, Kase Naoki¹, Tamura Ryuji³, Saleem Denholme¹, Kimizuka Noboru⁴, Miyakawa Nobuaki¹ (1.Tokyo Univ. Sci., 2.Univ. Tokyo, 3.Tokyo Univ. Sci., 4.Sonora Univ.)

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