[18a-G203-1~10] 13.5 Semiconductor devices and related technologies

[18a-G203-10] Demonstration of n-ZnO/p-(Si, Ge) bilayer tunneling field effect transistor

〇Kimihiko Kato¹, Hiroaki Matsui¹, Hitoshi Tabata¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. of Tokyo)

Keywords:tunneling FET, bilayer, ZnO

We have succeeded the demonstration of TFET operation by using n-ZnO/p-(Si or Ge) tunneling junctions with type-II energy band alignment, for the first time. The strong impact of the material and doping concentration in the source region, and the importance of the gate stack engineering have been experimentally verified. We have realized record-high ON/OFF current ratio of ~10⁸ among TFETs reported so far and minimum S.S. of ~71 mV/dec.