An Analysis of Short Channel Effects in III-V FinFETs using a Quantum Drift Diffusion Model

Shohiro Sho; Nobuya Mori; Akira Hiroki; Shinji Odanaka

Presentation information

Symposium (Oral)

Symposium » Semiconductor Device Simulation: Applications and Future Perspectives

[18p-A202-1~15] Semiconductor Device Simulation: Applications and Future Perspectives

Sun. Mar 18, 2018 1:15 PM - 6:40 PM A202 (54-202)

Nobuya Mori(Osaka Univ.), Koichi Fukuda(AIST), Akira Hiroki(Kyoto Inst. of Tech.), Kenichiro Sonoda(Renesas), Nobutoshi Aoki(Toshiba Memory)

6:00 PM - 6:15 PM

[18p-A202-13] An Analysis of Short Channel Effects in III-V FinFETs using a Quantum Drift Diffusion Model

〇Shohiro Sho¹, Nobuya Mori¹, Akira Hiroki², Shinji Odanaka³ (1.Grad. School of Eng., Osaka Univ., 2.KIT, 3.CMC, Osaka Univ.)

Keywords:semiconductor device simulation, FinFET, short channel effects

In this presentation, we will present an analysis of short channel effects in Si, In_0.53Ga_0.47As, and GaSb FinFETs using a hybrid MPI/OpenMP parallelized code of a quantum drift diffusion model. We will present a gate length dependency of the subthreshold slope (SS) and drain induced barrier lowering (DIBL) effect.