[18p-A202-1~15] Semiconductor Device Simulation: Applications and Future Perspectives

[18p-A202-12] Device Simulation of Reliability for Advanced Semiconductor Devices

〇Takamitsu Ishihara¹, Kazuya Matsuzawa¹, Takeshi Naito², Sadayuki Yoshitomi² (1.Inst. of MemoryTech. R&D, Toshiba Memory Corp., 2.Memory Devision,Toshiba Memory Corp.)

Keywords:reliability, device simulation, ESD

Reliability of LSI has become an important technological issue as the devie-size scaling. ESD, electro-migration, NBTI/PBTI are the typical origin of reliability degradation. We have sucessfully established the device simulation of the accurate estimation of ESD by reproducing the experimental results of pulse-number of breakdown based on the modeling of the gate dielectric breakdown. The device simulation of the reliability-worse place of the circuit found by the circuit reliability simulation enables the circuit design of reliability with a good prospects.