Symposium (Oral)

[18p-A202-1~15] Semiconductor Device Simulation: Applications and Future Perspectives

Sun. Mar 18, 2018 1:15 PM - 6:40 PM A202 (54-202)

Nobuya Mori(Osaka Univ.), Koichi Fukuda(AIST), Akira Hiroki(Kyoto Inst. of Tech.), Kenichiro Sonoda(Renesas), Nobutoshi Aoki(Toshiba Memory)

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1:15 PM - 1:20 PM

[18p-A202-1] Opening Remarks

〇Nobutoshi Aoki¹ (1.Toshiba Memory)

1:20 PM - 1:50 PM

[18p-A202-2] Research and Education in University for Electronic Devices using Computer Simulation

〇Ken Uchida¹ (1.Keio Univ.)

1:50 PM - 2:20 PM

[18p-A202-3] The use of semiconductor device simulator for educational purposes to understand current conduction mechanisms

〇Yoshinari Kamakura¹ (1.Osaka Univ.)

2:20 PM - 2:50 PM

[18p-A202-4] Flexible Interface for Development of Device Simulation Model

〇Kazuya Matsuzawa¹, Masatoshi Abe¹, Yoshinori Oda¹, Yutaka Akiyama¹, Takahisa Tanaka^1,2, Ken Uchida^1,2 (1.TRDEC, Keio Univ., 2.Elec.Eng. Keio Univ.)

3:00 PM - 3:30 PM

[18p-A202-5] Physical Aspects of Potential Fluctuations associated with Localized Disorder in Device Simulations under Nanostructures

〇Nobuyuki Sano¹ (1.Univ. Tsukuba)

3:30 PM - 4:00 PM

[18p-A202-6] Semiconductor Device Simulation with Quantum Mechanics

〇Nobuya Mori¹, Gennady Mil'nikov¹, Shohiro Sho¹, Shintaro Makihira¹, Yoshinari Kamakura¹, Jun-ichi Iwata², Atsushi Oshiyama² (1.Osaka Univ., 2.Univ. of Tokyo)

4:00 PM - 4:30 PM

[18p-A202-7] Device Simulation of Ferroelectric Gate Negative Capacitance Transistors

〇Junichi Hattori¹, Koichi Fukuda¹, Tsutomu Ikegami¹, Hiroyuki Ota¹, Shinji Migita¹, Hidehiro Asai¹ (1.AIST)

4:45 PM - 5:00 PM

▲ [18p-A202-8] Device Simulation Study on the Physics of SOI Devices in Space —Effects of Galactic Cosmic Rays on a Well Structure Under the Buried Oxide—

〇(D)ChinHan Chung^1,2, Daisuke Kobayashi^2,1, Kazuyuki Hirose^1,2 (1.Univ. of Tokyo, 2.JAXA)

5:00 PM - 5:15 PM

[18p-A202-9] Simulation study of SOI pixel detector based on linear mode avalanche photodiode

〇(D)RYUTARO HAMASAKI¹, Yasuo Arai² (1.SOKENDAI, 2.KEK)

5:15 PM - 5:30 PM

[18p-A202-10] Analysis of Super-Steep SS PN-Body-Tied SOI FET by TCAD Simulation

〇Takayuki Mori¹, Jiro Ida¹ (1.Kanazawa Inst. of Tech.)

5:30 PM - 5:45 PM

△ [18p-A202-11] Relaxation of Self-Heating-Effect for Lateral-Stacked Silicon-NW FETs with Source/Drain-Recessed Contact Structure

〇Eisuke Anju¹, Iriya Muneta¹, Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Hitoshi Wakabayashi¹ (1.Tokyo Tech)

5:45 PM - 6:00 PM

[18p-A202-12] Device Simulation of Reliability for Advanced Semiconductor Devices

〇Takamitsu Ishihara¹, Kazuya Matsuzawa¹, Takeshi Naito², Sadayuki Yoshitomi² (1.Inst. of MemoryTech. R&D, Toshiba Memory Corp., 2.Memory Devision,Toshiba Memory Corp.)

6:00 PM - 6:15 PM

[18p-A202-13] An Analysis of Short Channel Effects in III-V FinFETs using a Quantum Drift Diffusion Model

〇Shohiro Sho¹, Nobuya Mori¹, Akira Hiroki², Shinji Odanaka³ (1.Grad. School of Eng., Osaka Univ., 2.KIT, 3.CMC, Osaka Univ.)

6:15 PM - 6:30 PM

[18p-A202-14] Comparative discussion of non-equilibrium Green’s function method and "Top of the Barrier" model for nanoscale device simulation

〇SATOFUMI SOUMA¹, NAOSUKE OKA¹, YUYA SOTODA¹, RYOMA SHIMIZU¹, MATSUTO OGAWA¹ (1.Kobe Univ.)

6:30 PM - 6:40 PM

[18p-A202-15] Closing Remarks

〇Toshiro Hiramoto¹ (1.The Univ. of Tokyo)

Sessions

Symposium » Semiconductor Device Simulation: Applications and Future Perspectives