[18p-C204-1~9] Synthesis and plasma processing for 2D sheet materials -from ultra-thin films to atomically thin layered materials-

[18p-C204-7] A New Approach to Sputter Epitaxy for Growth of Thin Films with Atomically-Flat Surface on Large Lattice Mismatched Substrates

〇Naho Itagaki¹, Kazuya Iwasaki¹, Kazunori Koga¹, Masaharu Shiratani¹ (1.Kyushu Univ.)

Keywords:sputtering, heteroepitaxy, inverse Stranski-Krastanow mode

Here we report a new crystal growth mode of heteroepitaxy, “inverse Stranski-Krastanow (SK) mode”, where 3D islands are initially formed and subsequent growth of 2D layers occurs on the 3D islands. This 3D-2D transition, which is just opposite to the 2D-3D transition in the SK mode, is caused by introducing impurity atoms into the growth atmosphere in an initial stage of crystal growth. Through the inverse SK mode, single crystalline ZnO films have been successfully fabricated on 18%-lattice-mismatched sapphire substrates. We believe that our findings on this growth mode will offer new opportunities for designing materials with unprecedented properties.