[18p-C302-1~19] 13.7 Compound and power electron devices and process technology

[18p-C302-1] Dynamic charging model of current conduction in atomic-layer-deposited Al₂O₃ films on GaN

〇Atsushi Hiraiwa^1,2, Satoshi Okubo³, Kiyotaka Horikawa³, Hiroshi Kawarada^1,3,4 (1.RONLI, Waseda Univ., 2.IMaSS, Nagoya Univ., 3.FSE, Waseda Univ., 4.KMLMST, Waseda Univ.)

Keywords:Al2O3, atomic layer deposition, current conduction

Based on the space-charge-limited field emission (SCC-FE) process, we developed a new method for analyzing the current conduction in atomic-layer-deposition Al₂O₃ films. In the method, both the capacitance-voltage and current-voltage (I−V) characteristics are measured after voltage stressing and analyzed based on the SCC-FE process. Hence, the charged state of the Al₂O₃ films is clarified as a function of gate voltage. The experimental and the simulated I−V characteristics excellently agreed with each other for all gate voltages. Additionally, the flat-band voltages agreed well between the two. These agreements are a clear support for the validity and significance of the method developed in this study.