[18p-C302-1~19] 13.7 化合物及びパワー電子デバイス・プロセス技術

▲ [18p-C302-18] Simulation of Heat Extraction from Ga₂O₃ MOSFETs with an Integrated SiC Heat Sink

〇ManHoi Wong¹、Yoji Morikawa²、Masataka Higashiwaki¹ (1.NICT、2.Silvaco Japan)

キーワード：Ga2O3, MOSFET, heat

Wide-bandgap β-Ga₂O₃ has attracted considerable interest for power electronics, but its low thermal conductivity of less than 30 W/m·K limits the performance and reliability of Ga₂O₃ devices. A common approach to address self-heating in high power transistors involves integrating active device layers with a thermally conductive foreign substrate for heat extraction. As a proof of concept, we performed electrothermal simulations in this work to demonstrate the effectiveness of polycrystalline SiC as a heat sink material for reducing the channel temperature and improving the DC characteristics of Ga₂O₃ power devices.