[18p-D103-1~23] 15.7 Crystal characterization, impurities and crystal defects

[18p-D103-14] Concentration of vacancies in silicon wafers quenched at high-temperature thermal equilibrium measured by low-temperature ultrasonic technique

〇Hiroshi Kaneta¹, Yuichi Nemoto², Mitsuhiro Akatsu³, Keisuke Mitsumoto² (1.Kyushu Inst. of Tech., 2.Niigata Univ., 3.Phys. Dpt. Niigata Univ.)

Keywords:silicon, vacancy, quench