[18p-D103-1~23] 15.7 Crystal characterization, impurities and crystal defects

[18p-D103-21] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal(12) On the lifetime degradation of nitrogen doped FZ silicon by annealing

〇Naohisa Inoue^2,1, Yuichi Kawamura² (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

Keywords:FZ silicon crystal, nitrogen-point defect complex, carrier lifetime

The interaction of nitrogen and intrinsic point defects, vacancy (V) and self interstitial (I), was examined by the infrared absorption spectroscopy on the electron irradiated and post-annealed nitrogen doped FZ grown silicon crystal. Recently, lifetime degradation has been observed in the NFZ Si annealed between 400 and 800 ^oC. The N-V interaction in the same temperature range revealed here will help to understand the lifetime degradation mechanism.