The 65h JSAP Spring Meeting, 2018

Presentation information

Print

Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[18p-D103-1~23] 15.7 Crystal characterization, impurities and crystal defects

Sun. Mar 18, 2018 1:15 PM - 7:30 PM D103 (56-103)

Kentaro Kutsukake(Nagoya Univ.), Yutaka Ohno(Tohoku Univ.), Hiroaki Kariyazaki(GWJ), Shotaro Takeuchi(Ohsaka Univ.)

7:00 PM - 7:15 PM

[18p-D103-22] Measurement of carbon concentration in silicon crystal (XIV) Fabrication of reference sample and block gauge down to 1013cm-3 for IR measurement

〇Naohisa Inoue1,2, Yuichi Kawamura2 (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

Keywords:FZ silicon crystal, carbon concentration measurement, infrared absorption

Reference samples for IR measurement of carbon concentration in silicon were fabricated by electron irradiation from the samples provided from the leading polysilicon companies in the world. Substitutional carbon concentration ranged from 1E+15 to 1E+13 cm-3. Both companies and us shared the sample sets to improve the measurement sensitivity and accuracy.