The 65h JSAP Spring Meeting, 2018

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15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[18p-D103-1~23] 15.7 Crystal characterization, impurities and crystal defects

Sun. Mar 18, 2018 1:15 PM - 7:30 PM D103 (56-103)

Kentaro Kutsukake(Nagoya Univ.), Yutaka Ohno(Tohoku Univ.), Hiroaki Kariyazaki(GWJ), Shotaro Takeuchi(Ohsaka Univ.)

7:15 PM - 7:30 PM

[18p-D103-23] Measurement of carbon concentration in silicon crystal (XV) 2nd generation IR measurement down to 1013cm-3 in the international network

〇Naohisa Inoue1,2, Yuichi Kawamura2 (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

Keywords:FZ silicon crystal, carbon concentration measurement, infrared absorption

Infrared absorption measurement procedures of carbon concentration in silicon were established in the leading polysilicon companies by the collaboration. The carbon concentration in the reference was calibrated by using the standard samples.