[18p-D103-1~23] 15.7 Crystal characterization, impurities and crystal defects

[18p-D103-8] Competitive Gettering of Impurities between Oxide Precipitates and Film Stress in Silicon Wafers

〇Kazuhisa Torigoe¹, Toshiaki Ono¹ (1.SUMCO)

Keywords:silicon, gettering, oxide precipitate

Conventional experiments to evaluate the gettering for impurities by oxide precipitates in silicon wafers are performed using wafers without film stress due to devise structures. In this work, silicon nitride film was formed on silicon wafers with different density and size of oxide precipitates, which were contaminated by nickel. It is found that there is no effect by film stress on the gettering for nickel by oxide precipitates.