[18p-D103-1~23] 15.7 Crystal characterization, impurities and crystal defects

[18p-D103-9] Gettering Mechanism of Copper in n-type Silicon Wafers

〇Rie Ozaki¹, Kazuhisa Torigoe¹, Taisuke Mizuno¹, Masashi Nishimura¹, Kazuhiro Yamamoto¹ (1.SUMCO)

Keywords:semiconductor, silicon, gettering

Copper precipitates are formed in n-type silicon wafers contaminated with concentration of copper above 10¹⁶ cm^-3. Istratov et al. suggested relaxation gettering due to such copper precipitates is effective; however, in the case of low contamination levels, the influence of the copper precipitates on gettering efficiency is not revealed. In this work, in order to clarify gettering mechanism of copper in n-type silicon wafers, the dependence of the gettering efficiency for copper and precipitation of copper on dopant concentration is investigated using n-type silicon wafers in which oxide precipitates are removed by rapid thermal anneal.