[18p-E201-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [18p-E201-3] Reaction mechanism analysis for fabricating high quality metal oxide thin film
by Fine Channel type Mist CVD(Ⅱ)

〇(M1)Misaki Nishi¹, Li Liu¹, Syota Sato¹, Phimolphan Rutthongja¹, Masahito Sakamoto¹, Mariko Ueda¹, Pradeep Ellawala.K.C², Dang Giang Thai², Toshiyuki Kawaharamura^2,1 (1.Kochi Univ. of Tech, 2.Res.Inst.,Kochi Univ. of Tech)

Keywords:Mist CVD