The 65h JSAP Spring Meeting, 2018

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[18p-E202-1~22] 15.4 III-V-group nitride crystals

Sun. Mar 18, 2018 1:15 PM - 7:30 PM E202 (57-202)

Tsutomu Araki(Ritsumeikan Univ.), Ryuji Katayama(Osaka Univ.), Hajime Fujikura(SCIOCS)

7:00 PM - 7:15 PM

[18p-E202-21] Epitaxial growth of InGaN and InAlN films on YSZ substrates and its application to metal-insulator-semiconductor field-effect transistors

〇Kyohei Nakamura1, Atsushi Kobayashi1, Kohei Ueno1, Hiroshi Fujioka1,2 (1.The Univ. of Tokyo, 2.JST-ACCEL)

Keywords:nitride semiconductor, field-effect transistor